NPN Transistor
WILLAS
S1.O0ATS-U8R9FACPElMaOsUtNicT -SECHnOcTaTKpYsBuARlaRtIEeR TRErCaTnIFsIEiRsSto-20rVs- 200V
FM120-M+ BC868 THRU
FM...
Description
WILLAS
S1.O0ATS-U8R9FACPElMaOsUtNicT -SECHnOcTaTKpYsBuARlaRtIEeR TRErCaTnIFsIEiRsSto-20rVs- 200V
FM120-M+ BC868 THRU
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
TRANSISFTeOaRt(uNrPeNs)
FEATUREBbSeatttcehr
process reverse
design, excellent power dissipation offer leakage current and thermal resistance.
s
z High Lcouwrrpernotfile surface mounted application in order to
z
Low
vLoooplwttiampgiozewe
board space. er loss, high effi
cie
ncy.
High current capability, low forward voltage drop.
High surge capability.
MAXIMUMGuRaArdTriInNgGfoSr o(vTear=vo2lt5a℃ge purnotleecstisono. therwise noted)
Ultra high-speed switching.
Symbol Silicon epitaxPiarl apmlaneater rchip, metal silicoVnajluunection.Unit
VCBO LMeICaLd-oS-llfTerecDet-o1pr9-aB5rta0ss0me/2eV2eo8tlteangveironmental stand3a2rds of V
VCEO VEBO
RoCHoSllpercotdourc-Et fmoritpteacrkVinogltacogdee suffix "G" 20
Halogen free product for packing code suffix "H"
MeEcmhittaern-BiacsaelV...
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