2SD999

NPN Silicon Epitaxial Transistor FEATURES z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA) z Excellent DC Current Gain Linearity: hFE=140Typ.( VCE=1.0V, IC=1.0A) z Complements to PNP type 2SB798 Pb Lead-free Production specification 2SD999 SOT-89 ORDERING INFORMATION Type No. Marking 2SD999 CM/CL/CK Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector power dissipation 30 V 25 V 5.0 V 1.0 A 2.0 W Tj Junction Temperature -55 to +150 ℃ Tstg Storage Temperature -55 to +150 ℃ E117 Rev.B www.gmicroelec.com 1 Production specification NPN Silicon Epitaxial Transistor 2SD999 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 30 V Collector-emitter br...