Production specification
LOW FREQUENCY TRANSISTER（20V，3A）
FEATURES
z Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A...
Production specification
LOW FREQUENCY TRANSISTER（20V，3A）
FEATURES
z Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A).
z Excellent current gain characteristics. z Complements the 2SB1424.
Pb
Lead-free
2SD2150
Structure
Epitaxial planar type
NPN silicon
transistor.
ORDERING INFORMATION
Type No.
Marking
2SD2150
CFR
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO IC PC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous
Collector power dissipation
40 V
20 V
6V 3 A(DC) 5 A(Pulse)*1 0.5 W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature *1 Single pulse Pw=10ms
-55 to +150
℃
E031 Rev.A
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Production specification
LOW FREQUENCY TRANSISTER（20V，3A） 2SD2150
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltag...
