Silicon NPN epitaxial planar type
FEATURES
z Low collector-emitter saturation voltage VCE(sat).
z Satisfactory operatio...
Silicon
NPN epitaxial planar type
FEATURES
z Low collector-emitter saturation voltage VCE(sat).
z Satisfactory operation performances at high efficiency with the low-voltage power supply.
Pb
Lead-free
Production specification
2SD1119
ORDERING INFORMATION
Type No.
Marking
2SD1119
TQ/TR
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO IC ICP PC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current
Collector power dissipation
40 V 25 V 7V 3A 5A 1W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55 to +150
℃
E057 Rev.A
www.gmicroelec.com 1
Production specification
Silicon
NPN epitaxial planar type
2SD1119
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC=1mA ,IB=0
25
V
Emitter-base breakdown voltage
V(B...
