Production specification
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
2SC3357
FEATURES
Pb
z Low Noise and High Gain
Lead-free
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
z Large PT in Small Package
PT : 2 W with 16 cm2*0.7 mm Ceramic Substrate.
APPLICATIONS
z The 2SC3...
