NE85634

NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2  0.7 mm (t) ceramic substrate) Small package : 3-pin power minimold package ORDERING INFORMATION Part Number NE85634-A 2SC3357-A NE85634-T1-A 2SC3357-T1-A Quantity 25 pcs (Non reel) (Pb-Free) Supplying Form 12 mm wide embossed taping 1 kpcs/reel (Pb-Free) Collector face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Co...