Plastic-Encapsulate Transistors
FEATURES
• High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinear...
Plastic-Encapsulate
Transistors
FEATURES
High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898.
2SB1260(
PNP)
Marking: ZL
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-80
VCEO
-80
VEBO
-5
IC 1
PC 500
TJ 150
Tstg -55to +150
Unit
V V V A mW
1. BASE 2. COLLECTO 3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
Collector-base breakdown voltage
VCBO
unless otherwise specified) Test conditions IC=-50μA IE=0
Min Typ -80
Max Unit V
Collector-emitter breakdown voltage VCEO
IC=-1mA IB=0
-80
V
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
VEBO ICBO IEBO
IE=-50μA IC=0 VCB=-60V IE=0 VEB=-4V,IC=0
-5
V -1 μA -1 μA
DC current gain
h...
