Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1189 TRANSISTOR (PNP)
SOT-89-3L
FEATURES z High breakdown voltage z Complements to 2SD1767
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR 1
2
3. EMITTER
3
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO VEBO IC PC TJ Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -80
-80 -5 -0.7 0.5 150 -55~150
Unit V
V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=-50μA,IE=0
V(BR)CEO IC=-2mA,IB=0
V(BR)EBO IE=-50μA,IC=0
ICBO
.