MMBT4401W

Elektronische Bauelemente RoHS Compliant Product MMBT4401W NPN Silicon Switching Transistor COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 A L Top View BS VG C D H K J MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT4401W = K3X, 2X Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600 Symbol PD RqJA PD RqJA TJ, Tstg Max 200 1.8 556 200 2.4 417 – 55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitte...