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MMBT2907W

JR Electronics
Part Number MMBT2907W
Manufacturer JR Electronics
Description PNP Silicon Epitaxial Planar Medium Power Transistor
Published Aug 3, 2017
Detailed Description MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Ab...
Datasheet PDF File MMBT2907W PDF File

MMBT2907W
MMBT2907W

Overview
MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage MMBT2907W MMBT2907AW Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 60 40 60 5 600 200 150 - 55 to + 150 Unit V V V mA mW OC OC ShangHai JR Electronics.
CO.
,LTD.
http://www.
jrdz.
net.
cn MMBT2907W / MMBT2907AW Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 0.
1 mA at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 10...


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