MMBT2222AW

MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value MMBT2222W MMBT2222AW 60 75 30 40 56 600 200 150 - 55 to + 150 Unit V V V mA mW OC OC Page 1 of 5 3/17/2014 MMBT2222W / MMBT2222AW Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA Collector Base Voltage at IC = 10 µA MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW Collector Emitter Voltage at IC = 10 mA MMBT2222W MMBT2222AW Emitter Base Voltage at IE = 10 µA MMBT2222W MMBT2222AW Collector Base Cutoff Current at VCB = 50 V at VCB = 60 V Emitter Base Cuto...