SS8550W

Elektronische Bauelemente SS8550W PNP Silicon General Purpose Transistor RoHS Compliant Product FEATURES Power dissipation PCM : 0.2 W Collector Current ICM : -1.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C V 1 2 3 A L 3 Top View 12 G Collector 3 1 Base 2 Emitter BS Marking : Y2 C D HK J SOT-323 Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency output capacitance Symbol Test conditions MIN V(BR)CBO V(BR)CEO I...