Elektronische Bauelemente
SS8050W
NPN Silicon General Purpose Transistor
RoHS Compliant Product
FEATURES
Power dissi...
Elektronische Bauelemente
SS8050W
NPN Silicon General Purpose
Transistor
RoHS Compliant Product
FEATURES
Power dissipation PCM : 0.2 W
Collector Current ICM : 1.5 A
Collector-base voltage V(BR)CBO : 40 V
Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C
V
1 2
3
A L
3
Top View
12
G
Collector 3
1 Base
2 Emitter
BS
C
D
HK
J
SOT-323 Dim Min Max
A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage Collector-emitter breakdown voltage
V(BR)CBO V(BR)CEO
Ic= 100 A IE=0 Ic= 0.1mA IB=0
40 25
V V
Emitter-base breakdown voltage Collector cut-off current Collector cut-off current
V(BR)EBO ICBO ICEO
IE=100 A IC=0 VCB=40 V , IE=0 VCE=20V , IB=0
5
V 0.1 A 0.1 A
Emitter cut-off current
...
