Silicon Epitaxial Planar Transistor
FEATURES
z Low collector to emitter saturation voltage. z High forward current tran...
Silicon Epitaxial Planar
Transistor
FEATURES
z Low collector to emitter saturation voltage. z High forward current transfer ratio hFE. z Complementary to 2SB1218A. z Small package.
Pb
Lead-free
Production specification
2SD1819A
APPLICATIONS
z For general amplification.
ORDERING INFORMATION
Type No.
Marking
2SD1819A
ZQ/ZR/ZS
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
7
IC Collector Current -Continuous
100
PC Collector Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
F043 Rev.A
www.gmicroelec.com 1
Production specification
Silicon Epitaxial Planar
Transistor
2SD1819A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage
Symbol Test conditions V(BR)CBO IC=10μA,IE=0 V(BR...
