2N6274

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6274 DESCRIPTION ·High Switching Speed ·High DC Current Gain- : hFE= 30-120@ IC= 20A ·Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A ·Complement to Type 2N6377 APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 50 A ICM Collector Current-Peak 100 A IBB Base Current-Continuous 20 A PC Collector Power Dissipation @TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.7 ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product S...