2N5493

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5493 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 55V(Min) ·Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEV VCER VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 75 75 65 55 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 7 IBB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 1.8 50 150 Tstg Storage Temperature Range -65~150 UNIT V V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resista...