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PBSS4160T

GME

NPN Low VCEsat Transistor


Description
Production specification NPN Low VCEsat Transistor FEATURES z Low collector-emitter saturation voltage VCEsat Pb z High collector current capability IC and ICM Lead-free z High efficiency, reduces heat generation z Reduces printed-circuit board area required PBSS4160T APPLICATIONS z Major application segments z Power management z Peripheral driver ...



GME

PBSS4160T

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