MMBT6520L, NSVMMBT6520L
High Voltage Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications...
MMBT6520L, NSVMMBT6520L
High Voltage
Transistor
PNP Silicon
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Base Current Collector Current − Continuous THERMAL CHARACTERISTICS
Symbol VCEO VCBO VEBO
IB IC
Value −350 −350 −5.0 −250 −500
Unit Vdc Vdc Vdc mA mAdc
Characteristic
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C
Symbol PD
Max
225 1.8
Unit
mW mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W
300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses ex...