SMMBTH10-4L

MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage Emitter-Base Voltage THERMAL CHARACTERISTICS VCBO VEBO 30 Vdc 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient (Note 1) RθJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction to Ambient (Note 2) RθJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Rati...