Document
SEMICONDUCTOR
TECHNICAL DATA
MMBTA94
PNP EPITAXIAL PLANAR TRANSISTOR
We declare that the material of product compliance with RoHS requirements.
Description
3
2 1
The MMBTA94 is designed for application that requires high voltage.
SOT–23
Features
• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA
COLLECTOR 3
DEVICE MARKING
1 BASE
MMBTA94 = 4Z
Absolute Maximum Ratings
2 EMITTER
• Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 350 mW
• Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... -400 V VCEO .