SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES High Breakdown Voltage. Collector Power Dissipation : PC...
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=350mW.
MMBTA44
EPITAXIAL PLANAR
NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-BaseVoltage
VCBO
450
Collector-EmitterVoltage
VCEO
400
Emitter-Base Voltage
VEBO
6
Collector Current
IC 300
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT V V V mA mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (2) Emitter-Base Breakdown Voltage Collector Cut off Current Collector Cut off Current Emitter Cutoff Current
V(BR)CBO V(BR)CEO V(BR)CES V(BR)EBO
ICBO ICES IEBO
DC Current Gain *
hFE
VCE(sat) 1
Collector-Emitter Saturation Voltage *
VCE(sat) 2
VCE(sat) 3
Base-Emitter Saturation Voltage *
VBE...
