Plastic-Encapsulate Transistors
FEATURES
High breakdown voltage Low collector-emitter saturation voltage Complementary ...
Plastic-Encapsulate
Transistors
FEATURES
High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (
PNP)
MMBTA42(
NPN)
MARKING: 1D
Maximum Ratings (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Thermal Resistance, junction to Ambient Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC RÓ¨JA TJ Tstg
300 300 5 500 0.35 357 150 -55to +150
Units
V V V mA W /mW
1. BASE 2. EMITTER 3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
VCBO VCEO VEBO ICBO IEBO
hFE(1) hFE(2) hFE(3) VCE(sat) ...
