AUIRFR3710Z

AUTOMOTIVE GRADE   Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRFR3710Z HEXFET® Power MOSFET VDSS RDS(on) max. 100V 18m ID (Silicon Limited) 56A ID (Package Limited) 42A D G Gate S G D-Pak AUIRFR3710Z D Drain S Source Base part number AUIRFR3710Z Package Type D-Pak Standard Pack Form Quant...