BF823

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector–emitter voltage (RBE = 2,7 kW ) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain –IC = 25 mA; –VCE = 20 V Feedback capacitance at f = 1 MHz · IC = 0; –VCE = 30 V Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 10 V BF821 –VCB0 max. –VCE0 max. –VCER max. –ICM max. Ptot max. Tj max. 300 — 300 BF823 250 V 250 V –V 100 mA 250 mW 150 ° C hFE > 50 Cre < 1,6 pF fT > 60 MHz Continental Device India Limited Data Sheet Page 1 of 3 BF821 BF823 RATINGS (at TA...