512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008R2C Family
CMOS SRAM
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision ...
Description
K6F4008R2C Family
CMOS SRAM
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
1.0 Finalized - Errata correction - Change for tWP: 55 to 50ns for 70ns product - Change for tWHZ: 25 to 20ns for 70ns product
Draft Date July 28, 1999
May 4, 2000
Remark Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0 May 2000
K6F4008R2C Family
CMOS SRAM
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology: Full CMOS Organization: 512K x8 bit Power Supply Voltage: 1.65~2.2V Low Data Retention Voltage: 1.0V(Min) Three state output status and TTL Compatible Package Type: 48-FBGA-6.5...
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