Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCW66 TRANSISTOR (NPN)
FEATURES Complementary to BCW68 BCW66 is subdivided into three groups F,G and H according to DC current gain
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 75 45 5 0.8 0.2 150
-55 ~ +150
Unit V V V A W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Input capacitance Noise figure
Symbol V(BR)CBO V(BR).