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BCW66G Dataheets PDF



Part Number BCW66G
Manufacturers JCET
Logo JCET
Description NPN Transistor
Datasheet BCW66G DatasheetBCW66G Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW66 TRANSISTOR (NPN) FEATURES Complementary to BCW68 BCW66 is subdivided into three groups F,G and H according to DC current gain SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Tem.

  BCW66G   BCW66G



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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW66 TRANSISTOR (NPN) FEATURES Complementary to BCW68 BCW66 is subdivided into three groups F,G and H according to DC current gain SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 75 45 5 0.8 0.2 150 -55 ~ +150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Input capacitance Noise figure Symbol V(BR)CBO V(BR).


BCW66F BCW66G BCW66H


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