DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC856W; BC857W; BC858W PNP general purpose transistors
Produ...
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC856W; BC857W; BC858W
PNP general purpose
transistors
Product data sheet Supersedes data of 1999 Apr 12
2002 Feb 04
NXP Semiconductors
PNP general purpose
transistors
Product data sheet
BC856W; BC857W; BC858W
FEATURES Low current (max. 100 mA) Low voltage (max. 65 V).
APPLICATIONS General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC847W and BC848W.
MARKING
TYPE NUMBER BC856W BC856AW BC856BW BC857W BC857AW BC857BW BC857CW BC858W
MARKING CODE(1) 3D* 3A* 3B* 3H* 3E* 3F* 3G* 3M*
Note
1. * = -: made in Hong Kong. * = t: made in Malaysia.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
handbook, halfpage
1 Top view
3
1
2
MAM048
3 2
Fig.1 Simplified outline (SOT323; SC70) and symbol.
2002 Feb 04
2
NXP Semiconductors
PNP general purpose
transistors
Product data sheet
BC856W; BC857W; BC858W
LIMITING VALUES In accordance w...