BC858AW-G

Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150°C SOT-323 0.053(1.35) 0.045(1.15) 0.039 (1.00) 0.035 (0.90) 0.087 (2.20) 0.079 (2.00) 3 12 0.055 (1.40) 0.047 (1.20) 0.006 (0.15) 0.003 (0.08) 0.096 (2.45) 0.085 (2.15) Mechanical data -Case: SOT-323, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. 0.016 (0.40) 0.008 (0.20) 0.004 (0.10) max 0.018 (0.46) 0.010 (0.26) Circuit diagram -1.BASE -2.EMITTER -3.COLLECTOR 3 12 Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage BC856W-G BC857W-G BC858W-G VCBO -80 -50 -30 V Collector-Emitter...