BC817-16

BC817 NPN Silicon Epitaxial Planar Transistors For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC807 and BC808 are recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot RØJA TJ TS VALUE 50 45 5 500 200 500 150 - 55 to + 150 UNIT V V V mA mW K/W ℃ ℃ Electrical Characteristics at Ta = 25℃ PARAMETER DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 20 V Emitter-Base Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base-Emitter Voltage at...