BC817
NPN Silicon Epitaxial Planar Transistors
For switching, AF driver and amplifier applications
These transistors a...
BC817
NPN Silicon Epitaxial Planar
Transistors
For switching, AF driver and amplifier applications
These
transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the
PNP transistors BC807 and BC808 are recommended.
1.Base 2.Emitter 3.Collector SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃) PARAMETER
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC Ptot RØJA TJ TS
VALUE 50 45 5 500 200 500 150
- 55 to + 150
UNIT V V V mA
mW K/W ℃ ℃
Electrical Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group
at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 20 V Emitter-Base Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base-Emitter Voltage at...