BC808-25LT1G, BC808-40LT1G
General Purpose Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applica...
BC808-25LT1G, BC808-40LT1G
General Purpose
Transistors
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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COLLECTOR 3
1 BASE
2 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
−25 −30 −5.0 −500
V V V mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina Substrate, (Note 2)
TA = 25°C Derate above 25°C
PD 300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg ...