BC808−25LT1, BC808−40LT1
General Purpose Transistors
PNP Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RAT...
BC808−25LT1, BC808−40LT1
General Purpose
Transistors
PNP Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
−25 −30 −5.0 −500
V V V mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina Substrate, (Note 2)
TA = 25°C Derate above 25°C
PD
300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously...