2SD602A

Silicon Epitaxial Planar Transistor FEATURES z Complementary to 2SB710A PNP Transistor z Low collector to emitter saturation voltage VCE(sat) Pb Lead-free Production specification 2SD602A APPLICATIONS z General purpose amplifier applications SOT-23 ORDERING INFORMATION Type No. Marking 2SD602A XQ/XR/XS Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current 500 ICP Peak collector current 1 PC Collector power Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA A mW ℃ C181 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Transistor 2SD602A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V...