Document
2SB709A(3CG709A)
PNP /SILICON PNP TRANSISTOR
:/Purpose: General power amplifier applications. : 2SD601A(3DG601A)/Features:Complementary pair with 2SD601A(3DG601A).
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO -45 V
VCEO -45 V
VEBO
-7.0
V
IC
-100
mA
ICP
-200
mA
PC 200 mW
Tj 150 ℃
Tstg -55~150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob
Test condition
IC=-10μA
IE=0
IC=-2mA
IB=0
IE=-10μA
IC=0
VCB=-20V
IE=0
VCE=-10V
IB=0
VCE=-10V
IC=-2mA
IC=-100mA
IB=-10mA
VCB=-10V IC=-1mA f=200MHz
VCB=-10V IE=0
f=1MHz
Min
-45 -45 -7
160
Rating
Typ
-0.3 80 2.7
Max
-0.1 -100 460 -0.5
Unit
V V V μA μA
V MHz pF
hFE
hFE Classifications
hFE
hFE Range
Marking
Q 160-260
H1BQ
R 210-340.