2SB1198K

2SB1198K SOT-23-3L Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) — High breakdown voltage BVCEO=-80V — Complements the 2SD1782K MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 -5 -500 200 150 -55-150 Units V V V mA mW ℃ ℃ SOT-23-3L 2.92 0.35 1.17 2.80 1.60 0.15 1.90 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -80 Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -80 Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 Collector cut-off current ICBO VCB=-50V, IE=0 Emitter cut-off current IE...