2SB1197

SMD Type SMD Type PNP Transistors 2SB1197 (2SB1197K) Transistors Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -32 -5 -0.8 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltag Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-Emitter Saturation Voltage DC current transfer ratio Output Capacitance Transition frequency Symbol Test Conditions VCBO IC = -50 A...