2SA733

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA733 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier applicatioms. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Collector-Base Voltage VCBO -60 Collector-Emitter Voltage VCEO -50 Emitter-Base Voltage VEBO -5 Collector Current IC -100 Base Current IB -20 Total Power Dissipation PD 250 Junction Temperature TJ +150 Storage Temperature TSTG -55 to +150 Unit V V V mA mA mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ (1.0.2570)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp. 5oTyp. (1.27)Typ Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Collector-Base Breakdow...