2SA733

ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS G S P FORM A IS AVAILABLE Value 60 50 5 150 250 150 -55 to +150 Unit V V V mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru ® ST 2SA733 Characteristics at Tamb=25 oC DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group R O Y P L Collector Base Breakdown Voltage at -IC=100µA Colle...