2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP
COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS
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2N6515 2N6516 2N6517
NPN 2N6518 2N6519 2N6520
PNP
COMPLEMENTARY SILICON HIGH VOLTAGE
TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon
transistors designed for high voltage driver and amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage (
NPN) Emitter-Base Voltage (
PNP) Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature
SYMBOL
VCBO VCEO VEBO VEBO
IC IB PD TJ, Tstg
2N6515 2N6518
250
250
2N6516 2N6519
300 300 6.0 5.0 500 250 625 -65 to +150
2N6517 2N6520
350
350
UNITS V V V V mA mA
mW °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=150V
ICBO
VCB=200V
ICBO
VCB=250V
IEBO
VEB=5.0V (
NPN)
IEBO
VEB=4.0V (
PNP)
BVCBO
IC=100μA
BVCEO
IC=1.0mA
BVEBO
IE=10μA (
NPN)
BVEBO
IE=10μA (
PNP)
...
