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BTA10-800BW Dataheets PDF



Part Number BTA10-800BW
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description logic level and standard Triacs
Datasheet BTA10-800BW DatasheetBTA10-800BW Datasheet (PDF)

BTA10, BTB10 T1035, T1050 Datasheet 10 A Snubberless™, logic level and standard Triacs A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins. D²PAK A2 G A1 Features • Medium current Triac • Low thermal resistance with clip bonding • Low thermal resistance insulation ceramic for insulated BTA • High commutation (4Q) or very high commutation (3Q, Snubberless™) capability • BTA series UL1557 certified (file ref: 81734) • Packages are RoHS (2002/95/EC) compliant Description Available either in .

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BTA10, BTB10 T1035, T1050 Datasheet 10 A Snubberless™, logic level and standard Triacs A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins. D²PAK A2 G A1 Features • Medium current Triac • Low thermal resistance with clip bonding • Low thermal resistance insulation ceramic for insulated BTA • High commutation (4Q) or very high commutation (3Q, Snubberless™) capability • BTA series UL1557 certified (file ref: 81734) • Packages are RoHS (2002/95/EC) compliant Description Available either in through-hole or surface mount packages, the BTA10, BTB10 and T10xx Triac series are suitable for general purpose mains power AC switching. They can be used as ON/OFF function in applications such as static relays, heating regulation or induction motor starting circuit. They are also recommended for phase control operations in light dimmers and appliance motors speed controllers. The Snubberless™ versions (W suffix and T10xx) are especially recommended for use on inductive loads, because of their high commutation performance. By using an internal ceramic pad, the Snubberless™ series provide an insulated tab (rated at 2500 VRMS) complying with UL standards (file reference: E81734). Product status link BTA10, BTB10, T1035, T1050 Product summary IT(RMS) 10 A VDRM/VRRM 600 and 800 V IGT 25 to 50 mA DS3165 - Rev 9 - March 2019 For further information contact your local STMicroelectronics sales office. www.st.com BTA10, BTB10, T1035, T1050 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters IT(RMS) RMS on-state current (full sine wave) ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t I2t value for fusing Critical rate of rise of on-state current dl/dt IG = 2 x IGT , tr ≤ 100 ns VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range TO-220AB Tc = 105 °C TO-220AB Ins. Tc = 95 °C F = 50 Hz tp = 20 ms F = 60 Hz tp = 16.7 ms tp = 10 ms Value 10 100 105 55 Unit A A A2s F = 120 Hz Tj = 125 °C 50 A/µs tp = 10 ms tp = 20 µs Tj = 25 °C Tj = 125 °C Tj = 125 °C VDRM/VRRM + 100 4 1 -40 to +150 -40 to +125 V A W °C °C Table 2. Static electrical characteristics Symbol VT(1) VTO RD Test conditions ITM = 14 A, tp = 380 µs threshold on-state voltage Dynamic resistance IDRM/IRRM VDRM = VRRM 1. For both polarities of A2 referenced to A1 Tj 25 °C 125 °C 125 °C 25 °C 125 °C Max. Max. Max. Max. Value 1.55 0.85 40 5 1 Unit V V mΩ µA mA Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ (3 quadrants) Symbol Parameters Quadrant T1035 BTA10-xCW BTB10-xCW T1050 BTA10-xBW BTB10-xBW Unit IGT VGT VGD IH VD = 12 V, RL = 33 Ω VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C IT = 500 mA IL IG = 1.2 IGT dV/dt(2) VD = 67 % VDRM gate open, Tj = 125 °C I - II - III Max. I - II - III Max. I - II - III Min. I .


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