SI2312

SI2312 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 。 Trench FET Power MOSFET. / Applications 。 High speed switch. / Equivalent Circuit / Pinning 3 2 1 PIN1：S PIN 2：G PIN 3：D / Marking Marking C2H http://www.fsbrec.com 1/6 SI2312 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous Pulsed Drain Current Continuous Source Current Power Dissipation Storage Temperature Range Junction-to-Ambient Symbol VDSS VGSS ID IDM IS PD Tstg RθJA Rating 20 ±8 4.5 15 1.0 1.25 -55～150 100 Unit V V A A A W ℃ ℃/W / Electrical Characteristics(Ta=25℃) Parameter Drain–Source Breakdown Voltage Gate Threshold Voltage Stati...