SMD Type
P-Channel Enhancement Mode Field Effect Transistor AO3409 (KO3409)
MOSFET
Features
VDS (V) = -30V ID = -2.6 ...
SMD Type
P-Channel Enhancement Mode Field Effect
Transistor AO3409 (KO3409)
MOSFET
Features
VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V)
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1 +0.05
-0.01
+0.10.97 -0.1
0-0.1 +0.10.38
-0.1
11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Power Dissipation
TA=25
TA=70
Themal Resistance. Junction-to-Ambient
Themal Resistance. Junction-to-Case
Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM
PD
RthJA RthJC TJ, TSTG
Rating -30 20 -2.6 -2.2 -20 1.4 1 125 80
-55 to 150
Unit V V
A
W /W /W
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SMD Type
AO3409 (KO3409)
MOSFET
Electrical Characteristics Ta = 25
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Ga...
