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AO3407 Dataheets PDF



Part Number AO3407
Manufacturers HOTTECH
Logo HOTTECH
Description P-Channel MOSFET
Datasheet AO3407 DatasheetAO3407 Datasheet (PDF)

Plastic-Encapsulate Mosfets FEATURES The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. G AO3407 P-Channel MOSFET D 1.Gate 2.Source 3.Drain SOT-23 S Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C T =70°C Pulsed Drain Current C Power Dissipation B TA=25°C TA=70°C J.

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Plastic-Encapsulate Mosfets FEATURES The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. G AO3407 P-Channel MOSFET D 1.Gate 2.Source 3.Drain SOT-23 S Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C T =70°C Pulsed Drain Current C Power Dissipation B TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM PD TJ, TSTG Maximum -30 ±20 -4.1 -3.5 -25 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A,D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ Max 70 90 100 125 63 80 Unit V V A W °C Unit °C/W °C/W °C/W GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P4-P1 Plastic-Encapsulate Mosfets AO3407 Electrical Characteristics (TA=25°C, unl.


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