30V N-Channel Enhancement Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V,
[email protected] < 28mΩ RDS(ON),
[email protected],
[email protected] < 33mΩ RDS(ON),
[email protected],
[email protected] < 52mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
AO3400
D
SOT-23-3L
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max.
1.90 1.00 0.10 0.40 0.85
REF. 1.30 0.20 1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 30 VGS ± 12
Continuous Drain Current
ID 5.8
Pulsed Drain Current Maximum Power Dissipation
TA = 25oC TA = 75oC
IDM PD
30 1.4 1
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
145
Unit V
A
W oC oC/W
JinYu
semiconductor
www.htsemi.com
30V N-Channel Enhanceme...
