Document
MOSFET
IRF634
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Simple drive requirements Fast switching V DSS=250V; RDS(ON)0.45 ;I D=8.1A 1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VDSS
Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction temperature
Tstg Storage temperature
RATING 250 20 8.1 74 150
-65~150
UNIT V V A W
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA
VGS(TH) Gate threshold voltage
VDS= VGS; ID=0.25mA
RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.1A
IGSS Gate source leakage current
VGS=20V ;VDS=0
IDSS Zero gate voltage drain current VDS=250V; VGS=0
VSD Diode forward voltage
IF=8.1A; VGS=0
123
TO-220
MIN MAX UNIT
250 V 2 4V 450 m 100 nA 25 uA 2.0 V
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