SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE
1SS355
SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE
Features • Smal plastic package suitable for surface mounted design ...
Description
1SS355
SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE
Features Smal plastic package suitable for surface mounted design High Speed (Trr = 1.2 ns Typ.) High reliability with high surge current handling capability RoHS compliant package Applications High speed switching Description Silicon planar zener diode in a small plastic SMD SOD-323 package Packing & Order Information 3,000/Reel
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless
otherwise specified.)
Parameter
Symbol
Value
Maximum Peak Reverse Voltage
VRRM
90
Maximum DC Reverse Voltage
VRM
80
Maximum Average Forward Current
IF 100
Maximum Peak Forward Voltage
IFM 255
Maximum Surge Current (1s)
IFSM
500
Maximum Junction Temperature
TJ 125
Storage temperature range
TS -55 to +175
Unit V V mA mA mA °C °C
Publication Order Number: [1SS355]
© Bruckewell Technology Corporation Rev. A -201...
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