JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB10200CT SCHOTTKY BARRIER RE...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB10200CT
SCHOTTKY BARRIER RECTIFIER
FEATURES z
Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
TO-263-2L
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM VRWM
VR VR(RMS)
IO
IFSM
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave
PD RΘJA
Tj Tstg
Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
Value
200
140 10 120 2 50 125 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
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