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BZX55-12 Dataheets PDF



Part Number BZX55-12
Manufacturers NXP
Logo NXP
Description Voltage regulator diodes
Datasheet BZX55-12 DatasheetBZX55-12 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • Low voltage stabilizers or voltage references. The diodes are type branded. BZX5.

  BZX55-12   BZX55-12


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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • Low voltage stabilizers or voltage references. The diodes are type branded. BZX55 series DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZX55-C2V4 to BZX55-C75). handbook, halfpage k a MAM239 Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; note 1 Tamb = 50 °C; note 2 tp = 100 µs; square wave; Tj = 25 °C prior to surge tp = 8.3 ms; square wave; Tj ≤ 150 °C prior to surge Tstg Tj Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; lead length 8 mm. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 100 mA; see Fig.4 MIN. − MAX. 1.0 V UNIT storage temperature junction temperature CONDITIONS MIN. − MAX. 250 UNIT mA see Table “Per type” − − − − −65 − 400 500 40 30 +200 200 mW mW W W °C °C 1996 Apr 26 2 1996 Apr 26 3 Philips Semiconductors Per type Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZ MAX. 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 at IZtest MAX. 85 85 85 85 85 85 80 70 50 30 10 8 7 7 10 15 20 20 26 30 40 50 55 TEST TEMP. COEFF. SZ (mV/K) CURRENT at IZtest IZtest (mA) see Figs 5 and 6 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) at at Tj = 25 °C Tj = 150 °C MAX. 50 10 4 2 2 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 MAX. 100 50 40 40 40 40 20 10 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.15 6.8 7.5 8.25 9.0 9.75 11.25 12.0 13.5 15.0 VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 Voltage regulator diodes BZX55CXXX MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 2.28 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 MAX. 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 TYP. −1.8 −1.9 −2.1 −2.2 −2.4 −2.4 −2.4 −1.4 −0.8 1.6 2.2 3.0 3.8 4.5 5.5 6.5 7.7 8.4 9.8 11.3 12.8 14.4 16.0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 MAX. 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 BZX55 series Product specification 1996 Apr 26 4 Philips Semiconductors BZX55CXXX WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZ MAX. 220 220 220 220 220 220 500 600 700 700 1000 1000 1000 1500 at IZtest MAX. 55 80 80 80 80 80 90 90 110 125 135 150 200 250 TEMP. COEFF. TEST SZ (mV/K) CURRENT at IZtest IZtest (mA) see Figs 5 and 6 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) at at Tj = 25 °C Tj = 150 °C MAX. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 MAX. 2 2 2 2 2 2 2 2 2 2 2 2 2 2 16.5 18.0 20.25 22.25 24.75 27.0 29.25 32.25 35.25 38.25 42.0 46.5 51.0 56.25 VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 1.25 1.25 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 Voltage regulator diodes MIN. 22 24 27 30 33 36 39 43 47 51 56 62 68 75 Note 20.8 22.8 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 23.3 25.6 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 TYP. 18.7 20.4 22.9 27.0 29.7 32.4 35.1 38.7 44.0 49.0 55.0 62.0 70.0 78.0 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 MAX. 60 55 50 50 45 45 45 40 40 40 40 35 35 35 1. For BZX55-C2V4 up to C36 IZ = 1 mA; for C39 up to C75 IZ = 0.5 mA. BZX55 series Product specification Philips Semiconductors Product specification Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 8 mm BZX55 se.


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