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MBRB10150CT

GME

Schottky Barrier Rectifier

Production specification Schottky Barrier Rectifier MBRB10150CT…MBRB10200CT FEATURES z Metal-Semiconductor junction w...


GME

MBRB10150CT

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Description
Production specification Schottky Barrier Rectifier MBRB10150CT…MBRB10200CT FEATURES z Metal-Semiconductor junction with guard ring. z Epitaxial construction. Pb z Lead-free Low forward voltage drop,low switching losses. z High surge capacity. z For use in low voltage,high frequency inverters free wheeling,and polarity protection applications. z The plastic material carries U/L recognition 94V-0. TO-263 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBRB10150CT MBRB10200CT Unit VRRM Recurrent Peak Reverse Voltage 150 200 V VRMS RMS Reverse Voltage VDC IF(AV) IFSM DC Blocking Voltage Average Forward Total Device Rectified Current @TA=100℃ Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load RθJC Tj Tstg Typical Thermal Resistance Junction to Case Operating Junction and StorageTem-perature Range 105 140 150 200 10 120 1.5 -55 to +150 V V A A ℃/W ℃ O005 Rev.A www.gmicroelec....




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