2N6676 2N6677 2N6678
NPN SILICON POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICON...
2N6676 2N6677 2N6678
NPN SILICON POWER
TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6676 SERIES types are
NPN Silicon Power
Transistors designed for high voltage switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCEV VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC
2N6676 450
300
2N6677 550 350 8.0 15 20 5.0 175
-65 to +200 1.0
2N6678 650
400
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE(off)=1.5V
ICEV
VCE=Rated VCEV, VBE(off)=1.5V, TC=100°C
IEBO
VEB=8.0V
BVCEO
IC=200mA (2N6676)
300
BVCEO
IC=200mA (2N6677)
350
BVCEO
IC=200mA (2N6678)
400
VCE(SAT) IC=15A, IB=3.0A
VBE(SAT) IC=15A, IB=3.0A
hFE...
